| Autor: |
Pei-Kang Chung, Shun-Tung Yen |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/28/2015, Vol. 118 Issue 8, p083102-1-083102-6, 6p, 7 Graphs |
| Abstrakt: |
We investigate the far-infrared thermal radiation properties of a heterojunction bipolar transistor. The device conveniently provides a high electric field for electrons to heat the lattice and the electron gas in a background with ions embedded. Because of very high effective temperature of the electron gas in the collector, the electron-ion bremsstrahlung makes efficient the thermal radiation in the far-infrared region. The transistor can yield a radiation power of 0.1 mW with the spectral region between 2 and 75 THz and a power conversion efficiency of 6 × 10-4. Such output contains a power of 20 μW in the low-frequency part (2-20 THz) of the spectrum. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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