| Autor: |
Guerra, J. Andres, Montañez, Liz, Winnacker, Albrecht, De Zela, Francisco, Weingärtner, Roland |
| Předmět: |
|
| Zdroj: |
Physica Status Solidi (C); Aug2015, Vol. 12 Issue 8, p1183-1186, 4p |
| Abstrakt: |
The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride ( a -AlN) and amorphous silicon nitride ( a -SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF dual magnetron reactive sputtering technique with a Tb concentration of about ∼1 at% An enhancement of the light emission is obtained after thermal annealing treatments following the activation of luminescent centers. Furthermore, the Tb related integrated light emission intensity is reported exhibiting a continuous increase with the samples temperature well below thermal quenching for both materials. This behavior suggests a phonon assisted energy migration mechanism which contributes to the effective energy transfer from the matrix to the Tb ions. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text