The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs.
| Autor: | Laishram, Robert, Kumar, Sunil, Dayal, Sindhu, Chaubey, Rupesh K., Raman, R., Sehgal, B. K. |
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| Zdroj: | 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE); 2014, p1-4, 4p |
| Databáze: | Complementary Index |
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