Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.
| Autor: | Spessot, Alessio, Ritzenthaler, Romain, Schram, Tom, Aoulaiche, Marc, Cho, Moonju, Luque, Maria Toledano, Horiguchi, Naoto, Fazan, Pierre |
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| Zdroj: | 2015 International Conference on IC Design & Technology (ICICDT); 2015, p1-4, 4p |
| Databáze: | Complementary Index |
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