Advances n-type nc-Si:H layers depositing on passivation layer applied to the back surface field prepared by RF-PECVD.
| Autor: | Chia-Cheng Lu, Yu-Lin Hsieh, Pei-Shen Wu, Chien-Chieh Lee, Yen-Ho Chu, Jenq-Yang Chang, I-Chen Chen, Li, Tomi T. |
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| Zdroj: | 2015 China Semiconductor Technology International Conference; 2015, p1-3, 3p |
| Databáze: | Complementary Index |
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