Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films.

Autor: Amarasinghe, V. P., Wielunski, L., Barcz, A., Feldman, L. C., Celler, G. K.
Zdroj: ECS Journal of Solid State Science & Technology; 2014, Vol. 3 Issue 3, pP37-P42, 6p
Databáze: Complementary Index