| Autor: |
Sudheer Kumar, G Sarau, C Tessarek, M Göbelt, S Christiansen, R Singh |
| Předmět: |
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| Zdroj: |
Nanotechnology; 8/21/2015, Vol. 26 Issue 33, p1-1, 1p |
| Abstrakt: |
High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3–ZnO core–shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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