Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages.
Autor: | Goel, N., Dubey, P., Kawa, J., Mahapatra, S. |
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Zdroj: | 2015 IEEE International Reliability Physics Symposium; 2015, p00-CA.5.7, 0p |
Databáze: | Complementary Index |
Externí odkaz: |