Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages.

Autor: Goel, N., Dubey, P., Kawa, J., Mahapatra, S.
Zdroj: 2015 IEEE International Reliability Physics Symposium; 2015, p00-CA.5.7, 0p
Databáze: Complementary Index