Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology.
| Autor: | Saliva, M., Cacho, F., Ndiaye, C., Huard, V., Angot, D., Bravaix, A., Anghel, L. |
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| Zdroj: | 2015 IEEE International Reliability Physics Symposium; 2015, p00-CA.4.6, 0p |
| Databáze: | Complementary Index |
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