A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness.
Autor: | Guan, Lingpeng, Bobde, Madhur, Padmanabhan, Karthik, Yilmaz, Hamza, Bhalla, Anup, Zhang, Lei, Chiu, Allan, Kim, Jongoh, Li, Wenjun |
---|---|
Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p401-404, 4p |
Databáze: | Complementary Index |
Externí odkaz: |