A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness.

Autor: Guan, Lingpeng, Bobde, Madhur, Padmanabhan, Karthik, Yilmaz, Hamza, Bhalla, Anup, Zhang, Lei, Chiu, Allan, Kim, Jongoh, Li, Wenjun
Zdroj: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p401-404, 4p
Databáze: Complementary Index