Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates.
| Autor: | Chowdhury, S., Hitchcock, C., Dahal, R., Bhat, I. B., Chow, T. P. |
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| Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p353-356, 4p |
| Databáze: | Complementary Index |
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