1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination.
| Autor: | Yen, Cheng-Tyng, Hung, Chien-Chung, Hung, Hsiang-Ting, Lee, Lurng-Shehng, Lee, Chwan-Ying, Yang, Tzu-Ming, Huang, Yao-Feng, Cheng, Chi-Yin, Chuang, Pei-Ju |
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| Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p265-268, 4p |
| Databáze: | Complementary Index |
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