Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs.

Autor: Wang, Gangyao, Huang, Alex Q., Wang, Fei, Song, Xiaoqing, Ni, Xijun, Ryu, Sei-Hyung, Grider, David, Schupbach, Marcelo, Palmour, John
Zdroj: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p229-232, 4p
Databáze: Complementary Index