Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd.
| Autor: | Tega, Naoki, Yoshimoto, Hiroyuki, Hisamoto, Digh, Watanabe, Naoki, Shimizu, Haruka, Sato, Shintaroh, Mori, Yuki, Ishigaki, Takashi, Matsumura, Mieko, Konishi, Kumiko, Kobayashi, Keisuke, Mine, Toshiyuki, Akiyama, Satoru, Fujita, Ryusei, Shima, Akio, Shimamoto, Yasuhiro |
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| Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p81-84, 4p |
| Databáze: | Complementary Index |
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