95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses.
Autor: | Haberlen, O., Polzl, M., Schoiswohl, J., Rosch, M., Leomant, S., Nobauer, G., Rieger, W. |
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Zdroj: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p65-68, 4p |
Databáze: | Complementary Index |
Externí odkaz: |