| Autor: |
Yang Xiao, Zhao-Hui Zhai, Qi-Wu Shi, Li-Guo Zhu, Jun Li, Wan-Xia Huang, Fang Yue, Yan-Yan Hu, Qi-Xian Peng, Ze-Ren Li |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/22/2015, Vol. 107 Issue 3, p1-5, 5p, 5 Graphs |
| Abstrakt: |
The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-tometal transition (IMT) of undoped and tungsten (W)-doped VO2 film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO2 film and also reduces the pump fluence threshold of photo-induced IMT in VO2 film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO2, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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