| Autor: |
Katsouras, Ilias, Zhao, Dong, Blom, Paul W. M., Leeuw, Dago M. de, Asadi, Kamal, Spijkman, Mark-Jan, Li, Mengyuan |
| Předmět: |
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| Zdroj: |
Scientific Reports; 7/10/2015, p12094, 1p |
| Abstrakt: |
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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