| Autor: |
Weiner, Joseph S., Leven, Andreas, Houtsma, Vincent, Baeyens, Yves, Young-Kai Chen, Paschke, Peter, Yang Yang, Frackiovak, John, Wei-Jer Sung, Tate, Alaric, Reyes, Roberto, Kopf, Rose F., Weimann, Nils G. |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Sep2003, Vol. 38 Issue 9, p1512-1517, 6p, 4 Black and White Photographs, 3 Diagrams, 6 Graphs |
| Abstrakt: |
InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-Ω transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA/√Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-Ω transimpedance and 49-GHz bandwidth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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