Characterization of GaN and InxGa1-xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures.

Autor:	K. S. Ramaiah, D. Huang, M. A. Reshchikov, F. Yun, H. Morkoç
Zdroj:	Journal of Materials Science: Materials in Electronics; Apr2003, Vol. 14 Issue 4, p233-245, 13p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink