Autor: |
Metzger, W. K., Albin, D., Levi, D., Sheldon, P., Li, X., Keyes, B. M., Ahrenkiel, R. K. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 9/1/2003, Vol. 94 Issue 5, p3549, 7p, 1 Diagram, 6 Graphs |
Abstrakt: |
We show that time-resolved photoluminescence measurements of completed polycrystalline CdTe solar cells provide a measure of recombination near the CdTe/CdS metallurgical interface that is strongly correlated to the open-circuit voltage in spite of complex carrier dynamics in the junction region. Oxygen in the growth ambient during close-spaced sublimation generally reduces this recombination rate; grain size does not have a strong effect. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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