| Autor: |
Dae-Gyu Park, Ding Li, Tao, Meng, Fan, Zhifang, Botchkarev, Andrei E., Mohammad, S. Noor, Morkoç, Hadis |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1997, Vol. 81 Issue 1, p516, 8p, 2 Diagrams, 11 Graphs |
| Abstrakt: |
Reports on the structure of metal-insulator-semiconductor (MIS) field-effect transistor exhibiting field-effect mobility. Methods used for the growth of the structure; Hysteresis and frequency dispersion of the MIS; Factor affecting the change in the minority carrier recombination behavior of gallium-arsenic channel. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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