| Autor: |
Almeida, J., Coluzza, C., dell'Orto, T., Margaritondo, G., Terrasi, A., Ivanco, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1997, Vol. 81 Issue 1, p292, 5p, 2 Black and White Photographs, 1 Diagram, 4 Graphs |
| Abstrakt: |
Investigates the effect of thin silicon nitride intralayer and plasma passivation on semiconductor interfaces. Deposition of gold to study the Schottky formation process; Evaluation of the barrier modification; Interplay of factors related to the Schottky barrier height modification. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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