| Autor: |
Grace M T Chai, C A Broderick, E P O’Reilly, Z Othaman, S R Jin, J P Petropoulos, Y Zhong, P B Dongmo, J M O Zide, S J Sweeney, T J C Hosea |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Sep2015, Vol. 30 Issue 9, p1-1, 1p |
| Abstrakt: |
Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin–orbit splitting energy Δso in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% ≤ x ≤ 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (∼2.6 μm), while Δso increases from 0.42 to 0.62 eV, leading to a crossover between Eg and Δso around 3.8% Bi. The 5.8% Bi sample is the first example of this alloy where Δso > Eg has been confirmed at all temperatures. The condition Δso > Eg is important for suppressing hot-hole-producing non-radiative Auger recombination and inter-valence band absorption losses and so holds promise for the development of mid-infra-red devices based on this material system. The measured variations of Eg and Δso as a function of Bi content at 300 K are compared to those calculated using a 12-band k.p Hamiltonian which includes valence band anti-crossing effects. The Eg results as a function of temperature are fitted with the Bose–Einstein model. We also look for evidence to support the prediction that Eg in dilute bismides may show a reduced temperature sensitivity, but find no clear indication of that. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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