| Autor: |
Jaber, N., Wolfman, J., Négulescu, B., Ruyter, A., Feuillard, G., Bavencoffe, M., Fortineau, J., Sauvage, T., Courtois, B., Bouyanfif, H., Longuet, J. L., Autret-Lambert, C., Gervais, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/28/2015, Vol. 117 Issue 24, p244107-1-244107-7, 7p, 1 Color Photograph, 1 Chart, 3 Graphs |
| Abstrakt: |
The piezoelectric properties of compositional spread (1-x)BiFeO3-xGaFeO3 epitaxial thin films are investigated where Ga3+ substitution for Bi3+ is attempted in Bi1-xGaxFeO3 compounds. Ga content x was varied from 0 to 12% (atomic). Ferroelectric characterizations are reported at various length scales. Around 6.5% of Ga content, an enhancement of the effective piezoelectric coefficient d33eff is observed together with a change of symmetry of the film. Measured d33eff values in 135 nm thick films increased from 25 pm/V for undoped BiFeO3 to 55 pm/V for 6.5% Ga with no extrinsic contribution from ferroelastic domain rearrangement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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