| Autor: |
Sun, Quanzhi, Yang, Jianrong, Wei, Yanfeng, Zhang, Juan, Sun, Ruiyun |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Aug2015, Vol. 44 Issue 8, p2773-2778, 6p, 1 Chart, 4 Graphs |
| Abstrakt: |
Annealing techniques and secondary ion mass spectrometry have been used to study the characteristics of Au migration and concentration distributions in HgCdTe materials grown by liquid phase epitaxy. Secondary ion mass spectrometry measurements showed that Au concentrations had obvious positive correlations with Hg-vacancy concentration and dislocation density of the materials. Au atoms migrate toward regions of high Hg-vacancy concentration or move away from these regions when the Hg-vacancy concentration decreases during annealing. The phenomenon can be explained by defect chemical equilibrium theory if Au atoms have a very large migration velocity compared with Hg vacancies. Au atoms will also migrate toward regions of high dislocation density, leading to a peak concentration in the inter-diffusion region of HgCdTe materials near the substrate. By use of an Hg and Te-rich annealing technique, different concentration distributions of both Au atoms and Hg vacancies in HgCdTe materials were obtained, indicating that Au-doped HgCdTe materials can be designed and prepared to satisfy the requirements of HgCdTe devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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