| Autor: |
Sundgren, P., von Würtemberg, R. Marcks, Berggren, J., Hammer, M., Ghisoni, M., Oscarsson, V., Ödling, E., Malmquist, J. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 7/24/2003, Vol. 39 Issue 15, p1128-1129, 2p |
| Abstrakt: |
A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 μm singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90°C, while the peak output power only drops from 1 to 0.6 mW. Large-area 1300 nm VCSELs show multimode output power close to 3 mW. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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