| Autor: |
Ontolan, J. P. B., Alcantara, P. A. M., Vequizo, R. M., Odarve, M. K., Sambo, B. R. B. |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Jun2015, Vol. 12 Issue 6, p580-583, 4p |
| Abstrakt: |
In this study, the characteristic physicochemical and electrical properties of HCl-doped polyaniline (PAni) films grown via oxidative chemical polymerization of aniline on n -Si(100) are presented. Two exothermic processes were found for 0.2 M HCl solution during aniline polymerization while all others underwent one exothermic process only. All polyaniline films were of emeraldine salt form that exhibited connected rod-like to agglomerated grains and dendritic surface morphologies on top of wetting layer with increasing hydrochloric acid concentration. Rectifying behaviour of p- PAni/ n -Si(100) heterojunctions were also found indicating the formation of p-n junction between p -PAni and n -Si(100). (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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