| Autor: |
Bagiyev, Elnur, Balayeva, Narmina, Aliyeva, Yegana, Kerimova, Afet, Valiyev, Rusif, Mamiyev, Zamin, Gasimov, Nagi, Bayramov, Ayaz |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Jun2015, Vol. 12 Issue 6, p536-539, 4p |
| Abstrakt: |
ZnO and ZnO: Al thin films of about 100 nm thicknesses were deposited by magnetron sputtering method at 200-400 °C substrate temperatures under oxygen/argon gas mixture with different O/Ar ratio (0-6%O2). The higher crystallinities for ZnO: Al and ZnO films are achieved at 400 °C substrate temperature under 0% and 4% (O/Ar) mixture ratios, respectively. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometery (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Electrical, optical, and luminescent properties depending on crystallinities of the obtained films were studied. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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