Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001).

Autor: Oomae, Hiroto, Suzuki, Akiko, Toyota, Hideyuki, Nakamura, Shin'ichi, Uchitomi, Naotaka
Předmět:
Zdroj: Physica Status Solidi (C); Jun2015, Vol. 12 Issue 6, p516-519, 4p
Abstrakt: We studied the epitaxial growth of InAlAs on ZnSnAs2 thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs2 (ZnSnAs2:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 °C to maintain room-temperature ferromagnetism in ZnSnAs2:Mn. Reflection high-energy electron diffraction, X-ray diffraction measurements and cross-sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice-matched with ZnSnAs2, even at the low temperature of 300 °C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs2:Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs2 and ferromagnetic ZnSnAs2:Mn films are suitable for preparing InP-based magnetic semiconductor quantum structures. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
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