| Autor: |
Li, Jia-dong, Cheng, Jun-jie, Miao, Bin, Wei, Xiao-wei, Xie, Jie, Zhang, Jin-cheng, Zhang, Zhi-qiang, Li, Hai-Wen, Wu, Dong-min |
| Předmět: |
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| Zdroj: |
Microsystem Technologies; Jul2015, Vol. 21 Issue 7, p1489-1494, 6p |
| Abstrakt: |
AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEMT sensor was presented. It shows a rapid response when target prostate biomarker in buffer solution was added to the antibody-immobilized sensing area. The linear range for target prostate specific antigen detection has been demonstrated from 0.1 pg/ml to 10.269 ng/ml and a low detection below 0.1 pg/ml level is estimated, which is the best result of AlGaN/GaN HEMT biosensor for prostate specific antigen (PSA) detection till now. The sensitivity of 0.027 % is determined for 0.1 pg/ml prostate specific antigen solution. The electrical result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for the prostate cancer screening. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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