| Autor: |
Ma, Ying-Jie, Zhang, Yong-Gang, Gu, Yi, Chen, Xing-You, Zhou, Li, Xi, Su-Ping, Li, Hao-Si-Bai-Yin |
| Zdroj: |
IEEE Photonics Technology Letters; Mar2015, Vol. 27 Issue 6, p661-664, 4p |
| Abstrakt: |
We reported separate absorption and multiplication InAlAs/InGaAs avalanche photodiodes with a p-type multiplication layer. Wedge-shaped electric field profiles with different gradients and peak intensities confined in a thin InAlAs avalanche layer were realized. These devices showed optimum operating gains up to 40 in linear mode with low operating voltages <20 V, small gain slopes, and high-gain uniformity. Moreover, a reduced breakdown voltage temperature coefficient <6 mV/K in the temperature range of 200–350 K was observed, whereas the dark current showed a noticeable increase. Those multiplication performances are attributed to the modified electric field profiles and are ideally suitable for focal plane array imaging applications. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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