| Autor: |
Shouichiro Izumi, Noriyuki Fuutagawa, Tatsushi Hamaguchi, Masahiro Murayama, Masaru Kuramoto, Hironobu Narui |
| Zdroj: |
Applied Physics Express; Jun2015, Vol. 8 Issue 6, p1-1, 1p |
| Abstrakt: |
We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibited a threshold current of 8 mA and a threshold voltage of 4.5 V at a lasing wavelength of 446 nm. The maximum output power was 0.9 mW for an 8-µm-diameter current aperture, which was made possible because of the high thermal conductivity of the GaN substrate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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