| Autor: |
Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, S. J., Kao, C. J., Tun, C. J., Chen, M. G., Chang, W. H., Chi, G. C., Tsai, J. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2003, Vol. 94 Issue 3, p1753, 5p, 1 Diagram, 6 Graphs |
| Abstrakt: |
By using organometallic vapor phase epitaxy we have prepared i-GaN/low temperature (LT) GaN/ Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current and achieve a much larger photocurrent to dark current contrast ratio by introducing a LT GaN on top of the conventional nitride-based UV PDs. With an incident light wavelength of 350 nm and a - 1 V reverse bias, it was found that the measured responsivity was around 0.1 and 0.37 A/W for samples A and B, respectively. Furthermore, it was found that the operation speed of sample A is slower than that of sample B due to the highly resistive LT GaN layer induced large R C time constant. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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