| Autor: |
Luppi, Marcello, Ossicini, Stefano |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2003, Vol. 94 Issue 3, p2130, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
A first-principle investigation of the effects of multiple Si=O bonds at the surface of silicon-based clusters with different sizes has been carried out. Total-energy pseudopotential calculations within density functional theory have been applied varying systematically the number of Si=O bonds at the clusters surface. A nonlinear reduction of the energy gap with the Si=O bond number is found. A sort of saturation limit is displayed, providing a consistent interpretation of the photoluminescence redshift observed in oxidized porous silicon samples. Moreover, our results help to clarify the very recent findings on the single silicon quantum dot photoluminescence bandwidth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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