The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory.
| Autor: | Gao Dan, Liu Bo, Li Ying, Song Zhitang, Ren Wanchun, Li Juntao, Xu Zhen, Lü Shilong, Zhu Nanfei, Ren Jiadong, Zhan Yipeng, Wu Hanming, Feng Songlin |
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| Zdroj: | Journal of Semiconductors; May2015, Vol. 36 Issue 5, p1-1, 1p |
| Databáze: | Complementary Index |
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