| Autor: |
Cuscó, R., Domènech-Amador, N., Hatakeyama, T., Yamaguchi, T., Honda, T., Artús, L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 18, p185706-1-185706-4, 4p, 2 Charts, 3 Graphs |
| Abstrakt: |
The lattice dynamical properties of the corundum-like α-phase of Ga2O3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the Brillouin zone center of all the Raman-active modes are determined by polarized Raman scattering measurements on an α-Ga2O3 single crystal. By performing backscattering measurements from (0001) and (1010) faces, all Raman active modes are unambiguously identified. Density functional perturbation theory calculations were carried out to determine the symmetry and the frequency of the α-Ga2O3 lattice modes. We find a good agreement between the theoretical predictions and the Raman spectra. The relative intensity of the different modes and their polarizability are discussed. The Raman spectrum is dominated by a narrow A1g peak which indicates the high crystalline quality of the layers grown by the mist chemical vapor deposition method. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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