Autor:	Pease, R. L.
Předmět:	IONIZATION (Atomic physics) TRANSISTORS BIPOLAR integrated circuits INTEGRATED circuits ELECTRONICS
Zdroj:	IEEE Transactions on Nuclear Science; Jun2003 Part 3 of 4, Vol. 50 Issue 3, p539, 13p, 12 Graphs
Abstrakt:	Investigates the total dose effects in bipolar devices and circuits. Discussion on ionization-induced surface effects in discrete bipolar transistors; Characterization of the total dose response of microcircuits; Details on enhanced low dose rate sensitivity of bipolar linear circuits.
Databáze:	Complementary Index
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