| Autor: |
Zeng, Yuping, Kuo, Chien-I, Hsu, Chingyi, Najmzadeh, Mohammad, Sachid, Angada, Kapadia, Rehan, Yeung, Chunwing, Chang, Edward, Hu, Chenming, Javey, Ali |
| Zdroj: |
IEEE Transactions on Nanotechnology; May2015, Vol. 14 Issue 3, p580-584, 5p |
| Abstrakt: |
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nm-thin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 μA/μm2 at $V_{{\rm GS}} = V_{{\rm DS}} = 0.4$ V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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