TCAD based study of a novel 24 nm quantum well symmetric IDG NMOS transistor with ultra-low Ioff.
| Autor: | Baishya, S., Deb, Soumen |
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| Zdroj: | International Conference for Convergence for Technology-2014; 2014, p1-6, 6p |
| Databáze: | Complementary Index |
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