Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors.
| Autor: | Ocker, J., Kupke, S., Slesazeck, S., Mikolajick, T., Erben, E., Drescher, M., Naumann, A., Lazarevic, F., Leitsmann, R. |
|---|---|
| Zdroj: | 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW); 2014, p86-89, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|