Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer.

Autor: Nandi, Sanjoy Kumar, Liu, Xinjun, Li, Shuai, Venkatachalam, Dinesh Kumar, Belay, Kidane, Elliman, Robert Glen
Zdroj: 2014 Conference on Optoelectronic & Microelectronic Materials & Devices; 2014, p290-293, 4p
Databáze: Complementary Index