An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K.

Autor:	Zubkov, V., Kucherova, O., Yakovlev, I., Solomonov, A.
Předmět:	AUTOMATION CRYOELECTRONICS SEMICONDUCTOR wafers LIGHT emitting diodes HETEROSTRUCTURES OPTICAL properties of nanostructured materials QUANTUM wells INDIUM gallium nitride
Zdroj:	Russian Microelectronics; May2015, Vol. 44 Issue 3, p203-209, 7p
Abstrakt:	An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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