Simulation Study of a Novel High Performance Oxide Engineered Schottky Collector Bipolar Transistor.

Autor: Loan, Sajad A., Shabir, Humyra, Bashir, Faisal, Nizamuddin, M., Murshid, Asim M., Alamoud, Abdul Rahman, Abbasi, Shuja A.
Zdroj: Transactions on Engineering Technologies (9789401795876); 2015, p253-262, 10p
Databáze: Complementary Index