| Autor: |
Garibov, A., Madatov, R., Komarov, F., Pilko, V., Mustafayev, Yu., Akhmedov, F., Jakhangirov, M. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2015, Vol. 49 Issue 5, p586-589, 4p |
| Abstrakt: |
The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H ions. It is shown that the distribution of the crystal's components over depth is homogeneous; for doses as high as 5 × 10 cm, the stoichiometric composition of the compound's components is retained. The experimental value of the critical dose for the beginning of amorphization amounts to about 5 × 10 cm and is in accordance with the calculated value. The results obtained by the method of the Raman scattering of light confirm conservation of crystalline structure and the start of the amorphization process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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