| Autor: |
Alsmadi, A. M., Masmali, N., Jia, H., Guenther, J., Abu Jeib, H., Kerr, Lei L., Eid, K. F. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 15, p155703-1-155703-6, 6p, 1 Black and White Photograph, 1 Diagram, 3 Graphs |
| Abstrakt: |
The charge carriers type in antimony-doped ZnO (ZnO:Sb) microwires was studied using the hot probe technique. The wires were grown by a simple thermal evaporation method. Contrary to the expected p-type behavior reported for Sb doped ZnO thin films and nanowires, our hot probe measurements of representative single Sb-doped ZnO wires show a stable n-type behavior. The hot probe technique is a simple and efficient way to determine the charge carrier type from thermoelectric measurements on a single semiconductor wire and could offer an alternative to Hall effect measurements. The technique relies on creating a temperature gradient across the wire (i.e., heating one side of the wire relative to the other) and monitoring the resulting open-circuit voltage between the two ends. We also performed Energy Dispersive X-ray Spectroscopy measurements to identify and monitor the elemental composition in these ZnO:Sb wires. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
