Autor: |
Sanna, Simone, Esposito, Vincenzo, Andreasen, Jens Wenzel, Hjelm, Johan, Zhang, Wei, Kasama, Takeshi, Simonsen, Søren Bredmose, Christensen, Mogens, Linderoth, Søren, Pryds, Nini |
Předmět: |
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Zdroj: |
Nature Materials; May2015, Vol. 14 Issue 5, p500-504, 5p, 3 Graphs |
Abstrakt: |
Bismuth-oxide-based materials are the building blocks for modern ferroelectrics, multiferroics, gas sensors, light photocatalysts and fuel cells. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors, its instability prevents use at low temperature. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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