Autor: |
Ye, Shan, Hwang, Jen-Dong, Chen, Chih-Ming |
Předmět: |
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Zdroj: |
Metallurgical & Materials Transactions. Part A; Jun2015, Vol. 46 Issue 6, p2372-2375, 4p |
Abstrakt: |
The p-type BiTe thermoelectric materials made by zone-melting method exhibit high anisotropy in the mechanical/thermoelectric properties due to unidirectional crystal growth. This unidirectional crystal structure also has a strong effect on the Sn/ p-BiTe interfacial reactions. Stripe-like SnSb phase precipitated in the SnTe phase in a direction approximately perpendicular or parallel to the Sn/ p-BiTe interface depending upon the p-BiTe crystal orientation. Such anisotropic growth behavior of the SnSb phase significantly affected the SnTe phase growth. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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