| Autor: |
Mammeri, A. M., Mahi, F. Z., Varani, L. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2015, Vol. 1653 Issue 1, p1-7, 7p, 1 Chart, 4 Graphs |
| Abstrakt: |
In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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