| Autor: |
Argibay, N., Mogonye, J. E., Michael, J. R., Goeke, R. S., Kotula, P. G., Scharf, T. W., Dugger, M. T., Prasad, S. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2015, Vol. 117 Issue 14, p145302-1-145302-13, 13p, 3 Diagrams, 3 Charts, 10 Graphs |
| Abstrakt: |
We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol.% oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 lm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea=21.6 kJ/mol and Ao=2.3 × 10-17 m2/s for Au- 1 vol.% ZnO and Ea=12.7 kJ/mol and Ao=3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol.% ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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