Minority carrier diffusion length in AlxGa1-xN (x = 0.1) grown by ammonia molecular beam epitaxy.

Autor:	Malin, Timur, Gilinsky, Alexander, Mansurov, Vladimir, Protasov, Dmitriy, Zhuravlev, Konstantin, Yakimov, Eugeny
Předmět:	CHARGE carrier lifetime ALUMINUM gallium nitride GALLIUM nitride films ELECTRON beam induced current METAL organic chemical vapor deposition CRYSTALLOGRAPHY
Zdroj:	Physica Status Solidi (C); Apr2015, Vol. 12 Issue 4/5, p447-450, 4p
Abstrakt:	The room-temperature minority carrier diffusion length in n -Al0.1Ga0.9N grown by ammonia molecular beam epitaxy on (0001) sapphire for photodetector applications has been investigated. The measurements were performed using the spectral dependence of the photocurrent detected by the built-in p-n -junction on thinner layer samples, and by the electron beam induced current technique on films of up to 2 µm in thickness. The results show that the hole diffusion length in n -AlGaN films amounts to 120-150 nm, which is by 3-4 times larger than that in GaN films grown under similar growth conditions. The thicker films do not show a considerable improvement in the hole diffusion length value. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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